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| UWT1C220MCR1GB资料 | |
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UWT1C220MCR1GB PDF Download |
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File Size : 116 KB
Manufacturer:NICHICON Description:Note 4: Assumes that the external PNP pass transistor has negligible B-E reverse-leakage current when the emitter is biased at 0V (VCC) and the base is biased at 4.2V (VBAT). Note 5: The 4.68V maximum undervoltage lockout (UVLO) exit threshold must first be exceeded before the minimum VCC specification applies. Short duration drops below the minimum VCC specification of several microseconds or less are ignored by the UVLO. If manual shutdown is entered, then VCC must be higher than the 4.68V maximum UVLO threshold before manual shutdown can be exited. When operating near the minimum VCC, a suitable PNP transistor with a low saturation voltage must be used. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：UWT1C220MCR1GB 厂 家：NICHICON 封 装：06+ 批 号：SMD 数 量：150000 说 明：【自己库存】 |
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运 费： 所在地： 新旧程度： |
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| 联系人：陈生 |
| 电 话：0755-82565235.0755-88391555.0755-82807567 |
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