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| UUD1V4R7MCR1GS资料 | |
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UUD1V4R7MCR1GS PDF Download |
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File Size : 116 KB
Manufacturer:NICHICON Description:During a Bank Activate command cycle, defines the row address when sampled at the cross point of the rising edge of CK and falling edge of CK. During a Read or Write command cycle, defines the column address when sampled at the cross point of the rising edge of CK and falling edge of CK. In addition to the column address, AP is used to invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high, autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be pecharged regardiess of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used to define which bank to precharge. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：UUD1V4R7MCR1GS 厂 家：NICHICON 封 装：06+ 批 号：SMD 数 量：150000 说 明：【自己库存】 |
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运 费： 所在地： 新旧程度： |
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| 联系人：陈生 |
| 电 话：0755-82565235.0755-88391555.0755-82807567 |
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