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首页 > 推广型号列表 >TN20-2S101KT

TN20-2S101KT

TN20-2S101KT资料
TN20-2S101KT
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File Size : 116 KB
Manufacturer:MITSUBISHI
Description:  In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 4.   The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 5. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout,
 
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型 号:TN20-2S101KT
厂 家:MITSUBISHI
封 装:06+
批 号:SMD
数 量:320000
说 明:【自己库存】
 
 
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