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| TN10-2R101JT资料 | |
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TN10-2R101JT PDF Download |
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File Size : 116 KB
Manufacturer:MITSUBISHI Description:Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. |
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| 相关型号 | |
| ◆ Z3A43Y680M510KAT2A | |
| ◆ Y4C3F104Z500CT | |
| ◆ XCC44N3F470KG1 | |
| ◆ X7R224J5B | |
| ◆ WR06X103JT | |
| ◆ W3L1ZC105MAT1F | |
| ◆ W3A4YG104ZAT1A | |
| ◆ W3A4YC104MAT2A | |
| ◆ W3A45C102MA2TA | |
| ◆ W3A45A470KAT2A | |
| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：TN10-2R101JT 厂 家：MITSUBISHI 封 装：06+ 批 号：SMD 数 量：320000 说 明：【自己库存】 |
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运 费： 所在地： 新旧程度： |
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| 联系人：陈生 |
| 电 话：0755-82565235.0755-88391555.0755-82807567 |
| 手 机：13798377798 |
| QQ：819175396,302677436,343000888 |
| MSN：mwdsmd@hotmail.com,xiaowei700@hotmail.com |
| 传 真：0755-83177555 |
| EMail：mwdsmd@126.com |
| 公司地址： 深圳市福田区振中路鼎诚国际1018室 |
