 |
|||||||
|
|||||||
|
|
|||||||
|
|||||||
|
|
| RMTMK063CH100DP-F资料 | |
|
RMTMK063CH100DP-F PDF Download |
|
File Size : 116 KB
Manufacturer:TAIYOYUDEN Description: The RMTMK063CH100DP-F is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7 µA standby current (at VDD = 3 V, Ta = 25C, typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40 to 85C, the RMTMK063CH100DP-F can be used in environments exhibiting extreme temperature conditions. The RMTMK063CH100DP-F is available in a plastic 48-ball BGA. |
|
| 相关型号 | |
| ◆ Z3A43Y680M510KAT2A | |
| ◆ Y4C3F104Z500CT | |
| ◆ XCC44N3F470KG1 | |
| ◆ X7R224J5B | |
| ◆ WR06X103JT | |
| ◆ W3L1ZC105MAT1F | |
| ◆ W3A4YG104ZAT1A | |
| ◆ W3A4YC104MAT2A | |
| ◆ W3A45C102MA2TA | |
| ◆ W3A45A470KAT2A | |
| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
|
型 号：RMTMK063CH100DP-F 厂 家：TAIYOYUDEN 封 装：06+ 批 号：SMD 数 量：120000 说 明：【自己库存】 |
|||||
|
运 费： 所在地： 新旧程度： |
|||||
| 联系人：陈生 |
| 电 话：0755-82565235.0755-88391555.0755-82807567 |
| 手 机：13798377798 |
| QQ：819175396,302677436,343000888 |
| MSN：mwdsmd@hotmail.com,xiaowei700@hotmail.com |
| 传 真：0755-83177555 |
| EMail：mwdsmd@126.com |
| 公司地址： 深圳市福田区振中路鼎诚国际1018室 |
