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| GRP0332C1E750J资料 | |
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GRP0332C1E750J PDF Download |
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File Size : 116 KB
Manufacturer:MURATA Description: Experiments have shown that the MOSFET drain voltage will ring for 200-500ns after the gate is turned on. In order to reduce inaccuracies due to ringing, a 1µs blanking delay after gate turn-on is built into the current sense comparator. This 1us delay reduces the effectiveness of the current sense comparator when the output pulse width is below 1us. This can be problem when the set application output voltage is less than 3.0V with a 12V input. Under this condition the output current limit protection will not function properly. This is usually not true with a short circuit current condition, which causes the on time to be greater than the blanking delay. In this circumstance the current limit comparator would turn off the top FET driver. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：GRP0332C1E750J 厂 家：MURATA 封 装：06+ 批 号：SMD 数 量：120000 说 明：【自己库存】 |
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运 费： 所在地： 新旧程度： |
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| 联系人：陈生 |
| 电 话：0755-82565235.0755-88391555.0755-82807567 |
| 手 机：13798377798 |
| QQ：819175396,302677436,343000888 |
| MSN：mwdsmd@hotmail.com,xiaowei700@hotmail.com |
| 传 真：0755-83177555 |
| EMail：mwdsmd@126.com |
| 公司地址： 深圳市福田区振中路鼎诚国际1018室 |
