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| GRM42-6F104Z50资料 | |
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GRM42-6F104Z50 PDF Download |
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File Size : 116 KB
Manufacturer:MURATA Description:Current drawn during the EEPROM programming interval. If the device does not get VCC power, the pullup circuit on IO during the programming interval should be such that the voltage at IO is greater than or equal to VPUP(min). If VPUP in the system is close to Vpup(min) then a low-impedance bypass of RPUP that can be activated during programming may need to be added. The tPROG interval begins tREHmax after the trailing rising edge on IO for the last time slot of the E/S byte for a valid Copy Scratchpad sequence. Interval ends once the device's self-timed EEPROM programming cycle is complete and the current drawn by the device has returned from IPROG to IL or ICCS, respectively. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：GRM42-6F104Z50 厂 家：MURATA 封 装：06+ 批 号：SMD 数 量：120000 说 明：【自己库存】 |
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运 费： 所在地： 新旧程度： |
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| 联系人：陈生 |
| 电 话：0755-82565235.0755-88391555.0755-82807567 |
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| 公司地址： 深圳市福田区振中路鼎诚国际1018室 |
