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| GRM31CR60J476ME19L资料 | |
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GRM31CR60J476ME19L PDF Download |
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File Size : 116 KB
Manufacturer:MURATA Description:As VCE is further increased, beyond the thermally limited region, the safe output current decreases more rapidly. This so-called second breakdown region is a characteristic of bipolar output transistors. It is caused by the tendency of bipolar transistors to produce hot spotspoints on the transistor where current flow concentrates at high VCE. Exceeding the safe output current in the second breakdown region can produce a localized thermal runaway, destroying the transistor. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：GRM31CR60J476ME19L 厂 家：MURATA 封 装：06+ 批 号：SMD 数 量：240000 说 明：【自己库存】 |
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运 费： 所在地： 新旧程度： |
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