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| GRM2165C1H100JZ01D资料 | |
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GRM2165C1H100JZ01D PDF Download |
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File Size : 116 KB
Manufacturer:MURATA Description: The following discussion refers to the schematic in figure 2 below. A FET current source is used to bias a 6.3V zener diode. The zener voltage is divided by the resistor network R1 and R2. This voltage is then applied to the noninverting input of the operational amplifier which amplifies the voltage to produce a 4.096V output. The gain is determined by the resistor networks R3 and R4: G=1 + R4/R3. The 6.3V zener diode is used because it is the most stable diode over time and temperature. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：GRM2165C1H100JZ01D 厂 家：MURATA 封 装：06+ 批 号：SMD 数 量：320000 说 明：【自己库存】 |
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运 费： 所在地： 新旧程度： |
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| 联系人：陈生 |
| 电 话：0755-82565235.0755-88391555.0755-82807567 |
| 手 机：13798377798 |
| QQ：819175396,302677436,343000888 |
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| 传 真：0755-83177555 |
| EMail：mwdsmd@126.com |
| 公司地址： 深圳市福田区振中路鼎诚国际1018室 |
