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| CC30B1H104M-TP资料 | |
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CC30B1H104M-TP PDF Download |
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File Size : 116 KB
Manufacturer:MITSUBISHI Description:Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：CC30B1H104M-TP 厂 家：MITSUBISHI 封 装：06+ 批 号：SMD 数 量：120000 说 明：【自己库存】 |
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运 费： 所在地： 新旧程度： |
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| 联系人：陈生 |
| 电 话：0755-82565235.0755-88391555.0755-82807567 |
| 手 机：13798377798 |
| QQ：819175396,302677436,343000888 |
| MSN：mwdsmd@hotmail.com,xiaowei700@hotmail.com |
| 传 真：0755-83177555 |
| EMail：mwdsmd@126.com |
| 公司地址： 深圳市福田区振中路鼎诚国际1018室 |
