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316W5R223K50VBT资料 | |
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316W5R223K50VBT PDF Download |
File Size : 116 KB
Manufacturer:KYOCERA Description:The HYB 39S256400/800/160T are four bank Synchronous DRAMs organized as 4 banks 16MBit x4, 4 banks 8MBit x8 and 4 banks 4Mbit x16 respectively. These synchro- nous devices achieve high speed data transfer rates for CAS-latencies by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. The chip is fabricated using the Infineon advanced 256 MBit DRAM process technology. |
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1PCS | 100PCS | 1K | 10K | ||
价 格 | |||||
型 号:316W5R223K50VBT 厂 家:KYOCERA 封 装:06+ 批 号:SMD 数 量:120000 说 明:【自己库存】 |
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运 费: 所在地: 新旧程度: |
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