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| 12065C333KAT2A资料 | |
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12065C333KAT2A PDF Download |
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File Size : 116 KB
Manufacturer:AVX Description:high di/dts. The diodes negative di/dt during ta is directly controlled by the device clearing the stored charge. However, the positive di/dt during tb is an uncontrollable diode characteristic and is usually the culprit that induces current ringing. Therefore, when comparing diodes, the ratio of tb/ta serves as a good indicator of recovery abruptness and thus gives a comparative estimate of probable noise generated. A ratio of 1 is considered ideal and values less than 0.5 are considered snappy. Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter trr), have less stored charge and a softer reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through reverse recovery at a higher di/dt than a standard cell MOSFET diode without increasing the current ringing or the noise generated. In addition, power dissipation incurred from switching the diode will be less due to the shorter recovery time and lower switching losses. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：12065C333KAT2A 厂 家：AVX 封 装：07+ 批 号：SMD 数 量：480000 说 明：【自己库存】 |
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