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| 04026D105KAT2A资料 | |
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04026D105KAT2A PDF Download |
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File Size : 116 KB
Manufacturer:AVX Description:Notes: 4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 5. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 8. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：04026D105KAT2A 厂 家：AVX 封 装：06+ 批 号：SMD 数 量：120000 说 明：【自己库存】 |
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